HomeTech NewsSamsung reveals its memory ambition: 36 Gbps GDDR6 and 1,000-layer V-NAND

Samsung reveals its memory ambition: 36 Gbps GDDR6 and 1,000-layer V-NAND

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Samsung Electronics closes the week with a series of very interesting announcements for the memory market. The South Korean giant, at its Tech Day 2022 event, has provided some details of its plans for the development of next-generation solutions.

We start with the world of DRAM. Samsung says its chips are all in a 1b (10nm) process. This feature could guarantee a significant jump in performance for the successors of the RTX 4090, but also a jump in price.

Last but not least, we mention that Samsung is still working on improving its storage technology. The 8th generation V-NAND chips feature a 42% improvement in bit density over the previous generation.

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the new chips V-NAND with 1TB of capacity will hit the market later this year, but that’s not all. Also in development is 9th generation V-NAND, which will start mass production in 2024, so we will have to wait a bit to see it arrive.

The manufacturer says it is also working to get a lot of storage in a small space, as well as improve the speed and efficiency of its future solutions. Following that path, 2030 could stack more than 1,000 layers in its V-NAND memories.

Images: Samsung

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